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No Part number Description ( Function ) Manufacturers PDF
3542 2SK0065
Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage D

Panasonic Semiconductor
Panasonic Semiconductor
pdf
3541 2SK0123
Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚ Unit: mm 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 s Absolute Maximum

Panasonic Semiconductor
Panasonic Semiconductor
pdf
3540 2SK0198
Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification 0.40+0.10 –0.05 Unit: mm 0.16+0.10 –0.06 s Features q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 3 1.50+0.25 –0.05 2.8+0.2 –0.3 1 2 (

Panasonic Semiconductor
Panasonic Semiconductor
pdf
3539 2SK0301
Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal) 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching 5.0±0.2 5.1±0.2 4.0±0.2 unit: mm I Features 13.5±0.5 G Low noies, high gain G High gate to drain voltage VGDO 0.45 –0.1 +0.2 0.45 –0.1 +0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain vol

Panasonic Semiconductor
Panasonic Semiconductor
pdf
3538 2SK0601
Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal) 2SK601 Silicon N-Channel MOS FET For switching unit: mm s Features q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 0.4max. 45˚ 1.0–0

Panasonic Semiconductor
Panasonic Semiconductor
pdf
3537 2SK0614
Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal) 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm I Features 5.0±0.2 4.0±0.2 0.7±0.1 0.7±0.2 12.9±0.5 G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max dr

Panasonic Semiconductor
Panasonic Semiconductor
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