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2SJ665 PDF Datasheet

The 2SJ665 is P-channl SilICon MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 2SJ665
P-Channl Silicon MOSFET

Ordering number : EN8590A 2SJ665 P-Channel Power MOSFET –100V, –27A, 77mΩ, TO-263-2L http://onsemi.com Features • ON-resistance RDS(on)1=59mΩ(typ.) • 4V drive • Input capacitance Ciss=4200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Al

ON Semiconductor
ON Semiconductor
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Recommended search results related to 2SJ665

Part No Description ( Function) Manufacturers PDF
2SC2665   Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC2665 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE M

Inchange Semiconductor
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2SJ600   SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ600 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ600 PACKAGE TO-251 TO-25

NEC
NEC
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2SJ600   MOS Field Effect Transistor

SMD Type MOS Field Effect Transistor 2SJ600 Features Low on-resistance RDS(on)1 = 50 m RDS(on)2 = 79m MAX. (VGS =-10 V, ID = -13 A) MAX. (VGS = -4.0 V, ID =-13 A) +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 IC MOSFET TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: m

Kexin
Kexin
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2SJ601   SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ601 2SJ601-Z PACKAGE TO-

NEC
NEC
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2SJ601   MOS Field Effect Transistor

SMD Type MOS Field Effect Transistor 2SJ601 TO-252 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 IC MOSFET Features Low on-resistance RDS(on)1 = 31 m RDS(on)2 = 46m MAX. (VGS =-10 V, ID = -18 A) Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.28 1.50-0.1

Kexin
Kexin
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[1]    

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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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