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2SJ5804 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
10 2SJ580
Ultrahigh-Speed Switching Applications

Ordering number : ENN6669 2SJ580 P-Channel Silicon MOSFET 2SJ580 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2062A [2SJ580] 4.5 1.6 1.5 Low ON-resistanse. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute

Sanyo Semicon Device
Sanyo Semicon Device
pdf
9 2SJ583
Ultrahigh-Speed Switching Applications

Ordering number:ENN6409 P-Channel Silicon MOSFET 2SJ583LS Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SJ583LS] 10.0 3.5 7.2 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 2.4 0.7 Specifications Absolute Maximum Ratings at Ta = 25

Sanyo Semicon Device
Sanyo Semicon Device
pdf
8 2SJ583LS
Ultrahigh-Speed Switching Applications

Ordering number:ENN6409 P-Channel Silicon MOSFET 2SJ583LS Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SJ583LS] 10.0 3.5 7.2 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 2.4 0.7 Specifications Absolute Maximum Ratings at Ta = 25

Sanyo Semicon Device
Sanyo Semicon Device
pdf
7 2SJ584LS
Ultrahigh-Speed Switching Applications

Ordering number:ENN6410 P-Channel Silicon MOSFET 2SJ584LS Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SJ584LS] 10.0 3.5 7.2 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 2.4 0.7 Specifications Absolute Maximum Ratings at Ta = 25

Sanyo Semicon Device
Sanyo Semicon Device
pdf
6 2SJ585LS
Ultrahigh-Speed Switching Applications

Ordering number:ENN6412 P-Channel Silicon MOSFET 2SJ585LS Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SJ585LS] 10.0 3.5 7.2 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 2.4 0.7 Specifications Absolute Maximum Ratings at Ta = 25

Sanyo Semicon Device
Sanyo Semicon Device
pdf
5 2SJ586
Silicon P Channel MOS FET High Speed Switching

2SJ586 Silicon P Channel MOS FET High Speed Switching ADE-208-771A (Z) 2nd.Edition. June 1999 Features • Low on-resistance R DS = 4.1 Ω typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 Ω typ. (VGS = -2.5 V , ID = -50 mA) • 2.5 V gate drive device. • Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ586 Absolute Maximum Ratings (Ta =

Hitachi Semiconductor
Hitachi Semiconductor
pdf



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