2SJ334 PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 2SJ334 | Silicon P Channel MOS Type Field Effect Transistor 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance : |Yfs| = 23 S (typ.) z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mod |
 Toshiba Semiconductor |
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The datasheet is usually used for technical communication to describe technical characteristics of an item or product. |
2SJ3 Data sheets |
| Part No | Description ( Function) | Manufacturers | |
| 2SJ356 | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance an |
 NEC |
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| 2SJ377 | P CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ REALY DRIVE/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) Datasheet39.com 2SJ377 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L −π−MOSV) 2 2SJ377 5.2 ± 0.2 1.5 ± 0.2 Relay Drive, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain-source ON-resistance z High forward transfer admittance |
Toshiba Semiconductor |
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| 2SJ330 | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
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