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Datasheet 2SJ181 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
4 2SJ181   Silicon P-Channel MOS FET

2SJ181(L), 2SJ181(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. S
Hitachi Semiconductor
Hitachi Semiconductor
datasheet 2SJ181 pdf
3 2SJ181   (2SJ181 / 2SJ182) Silicon P-Channel MOS FET

( DataSheet : ) 2SJ181(L), 2SJ181(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPA
Hitachi Semiconductor
Hitachi Semiconductor
datasheet 2SJ181 pdf
2 2SJ181L   Silicon P-Channel MOS FET

2SJ181(L), 2SJ181(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. S
Hitachi Semiconductor
Hitachi Semiconductor
datasheet 2SJ181L pdf
1 2SJ181S   Silicon P-Channel MOS FET

2SJ181(L), 2SJ181(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. S
Hitachi Semiconductor
Hitachi Semiconductor
datasheet 2SJ181S pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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