No | Part number | Description ( Function ) | Manufacturers | |
494 | 2SJ0536 | Silicon P-Channel MOS FET Silicon MOS FETs (Small Signal) 2SJ0536 Silicon P-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching 2.1±0.1 0.425 1.25±0.1 0.425 unit: mm q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. q Low-voltage drive (Vth: −1 to 2V) q Low Ron 0.65 1 2.0±0.2 1.3±0 |
Panasonic Semiconductor |
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493 | 2SJ103 | P CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER / ANALOG SWITCH/ CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS) 2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · · High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA) Complimentary to 2SK246 Unit: mm Maximum Ratings ( |
Toshiba Semiconductor |
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492 | 2SJ104 | Silicon P Channel Junction Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ104 Unit: mm · High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Low RDS (ON) = 40 Ω (typ.) (IDSS = −5 mA) · Complimentary to 2SK364 Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage G |
Toshiba Semiconductor |
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491 | 2SJ105 | Silicon P Channel Junction Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ105 Unit: mm · High breakdown voltage: VGDS = 50 V · High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) · Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA) · Complimentary to 2SK330 · Small package |
Toshiba Semiconductor |
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490 | 2SJ106 | Silicon P Channel Junction Type Field Effect Transistor 2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm • High breakdown voltage: VGDS = 50 V • High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) • Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA) |
Toshiba Semiconductor |
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489 | 2SJ107 | Silicon P Channel Junction Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ107 Unit: mm • High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) • Low RDS (ON): RDS (ON) = 40 Ω (typ.) • Small package • Complementary to 2SK366 Absolute Maximum Ratings (Ta = 25°C) Characteristi |
Toshiba Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |