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2SJ PDF Datasheet

The 2SJ is . It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
494 2SJ0536
Silicon P-Channel MOS FET

Silicon MOS FETs (Small Signal) 2SJ0536 Silicon P-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching 2.1±0.1 0.425 1.25±0.1 0.425 unit: mm q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. q Low-voltage drive (Vth: −1 to 2V) q Low Ron 0.65 1 2.0±0.2 1.3±0

Panasonic Semiconductor
Panasonic Semiconductor
pdf
493 2SJ103
P CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER / ANALOG SWITCH/ CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS)

2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · · High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA) Complimentary to 2SK246 Unit: mm Maximum Ratings (

Toshiba Semiconductor
Toshiba Semiconductor
pdf
492 2SJ104
Silicon P Channel Junction Type Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ104 Unit: mm · High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Low RDS (ON) = 40 Ω (typ.) (IDSS = −5 mA) · Complimentary to 2SK364 Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage G

Toshiba Semiconductor
Toshiba Semiconductor
pdf
491 2SJ105
Silicon P Channel Junction Type Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ105 Unit: mm · High breakdown voltage: VGDS = 50 V · High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) · Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA) · Complimentary to 2SK330 · Small package

Toshiba Semiconductor
Toshiba Semiconductor
pdf
490 2SJ106
Silicon P Channel Junction Type Field Effect Transistor

2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm • High breakdown voltage: VGDS = 50 V • High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) • Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA)

Toshiba Semiconductor
Toshiba Semiconductor
pdf
489 2SJ107
Silicon P Channel Junction Type Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ107 Unit: mm • High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) • Low RDS (ON): RDS (ON) = 40 Ω (typ.) • Small package • Complementary to 2SK366 Absolute Maximum Ratings (Ta = 25°C) Characteristi

Toshiba Semiconductor
Toshiba Semiconductor
pdf

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List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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