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Datasheet 2SD880 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | 2SD880 | POWER TRANSISTORS(3A/60V/30W) A
A
A
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 Mospec Semiconductor |
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| 11 | 2SD880 | NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) 2SD880
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
!
Complement to 2SB834
TO-220
ABSOLUTE MAXIMUM RATINGS (TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25oC) Junction Temperatu |
 Wing Shing Computer Components |
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| 10 | 2SD880 | NPN EPITAXIAL TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SD880
NPN SILICON TRANSISTOR
NPN EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC 2SD880 is designed for audio frequency power amplifier applications.
FEATURES
* High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC= |
 Unisonic Technologies |
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| 9 | 2SD880 | Plastic-Encapsulated Transistors
Transys
Electronics
L I M I T E D
TO-220 Plastic-Encapsulated Transistors
2SD880
FEATURES Power dissipation PCM:
TRANSISTOR (NPN)
TO—220
1. BASE 2. COLLECTOR 3. EMITTER
1.5
W (Tamb=25℃)
Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and sto |
 TRANSYS Electronics |
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