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Datasheet 2SD669 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
16 | 2SD669 | NPN Plastic Encapsulated Transistor 2SD669/2SD669A
Elektronische Bauelemente
NPN Type
Plastic Encapsulate Transistors
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
TO-126C
FEATURES
Power dissipation PCM : 1mW Tamb=25
Collector current ICM : 1.5 A
Collector-base voltage V(BR)CBO : 180 V
Collector-emitter vo |
SeCoS |
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15 | 2SD669 | NPN Transistor RoHS 2SD669
2SD669 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
1 W (Tamb=25℃)
.,LCollector current
ICM: 1.5 Collector-base voltage
A
OV(BR)CBO: 180 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
TO-126C
1. EMITTER
2. COLLECTOR
3. BASE
123
ICEL |
WEJ |
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14 | 2SD669 | NPN Silicon Plastic-Encapsulate Transistor MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
• Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 fla |
MCC |
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13 | 2SD669 | NPN Transistor Transys
Electronics
LIMITED
TO-126C Plastic-Encapsulated Transistors
2SD669 TRANSISTOR (NPN)
FEATURES Power dissipation
PCM:
1 W (Tamb=25℃)
Collector current
ICM: 1.5 Collector-base voltage
A
V(BR)CBO: 180 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO- |
Transys |
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Número de pieza | Descripción | Fabricantes | |
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