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2SD649 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 2SD649
Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage

Inchange Semiconductor
Inchange Semiconductor
pdf

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2SD6 Data sheets

Part No Description ( Function) Manufacturers PDF
2SD636   (2SD636 / 2SD637) NPN Transistor

Free Datasheet http:///

Panasonic
Panasonic
datasheet pdf
2SD669   Silicon NPN Epitaxial

2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector

Hitachi Semiconductor
Hitachi Semiconductor
datasheet pdf
2SD667   Silicon NPN Epitaxial

2SD667, 2SD667A Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD667, 2SD667A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to em

Hitachi Semiconductor
Hitachi Semiconductor
datasheet pdf



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