No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SD2264 | Low Frequency Transistor(20V/ 3A) Transistors Low Frequency Transistor (20V, 3A) 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-237-C74) 243 Transistors FAbsolute maximum ratings (T |
ROHM Semiconductor |
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Recommended search results related to 2SD2264 |
Part No | Description ( Function) | Manufacturers | |
2SD2200 | PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN3151 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1451/2SD2200 80V/5A Switching Applications Features · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -Hig |
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2SD2201 | PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN3152 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1452/2SD2201 80V/7A Switching Applications Features · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1452/2SD2201-applied equipment. -Hig |
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2SD2202 | PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN3249 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1454/2SD2202 High-Current Switching Applications Features · Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting. Package Dimensions unit:m |
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2SD2203 | PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN3250 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1455/2SD2203 80V/7A High-Current Switching Applications Features · Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting. Package Dimensions |
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2SD2204 | NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITHCING/ HAMMER DRIVE/ PULSE MOTOR DRIVE APPLICATIONS) 2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.5 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (I |
Toshiba Semiconductor |
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