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2SD220 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
7 2SD2200
PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number:EN3151 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1451/2SD2200 80V/5A Switching Applications Features · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mount applications. -Small size of 2SB1451/2SD2200-applied equipment. · Low colle

Sanyo Semicon Device
Sanyo Semicon Device
pdf
6 2SD2201
PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number:EN3152 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1452/2SD2201 80V/7A Switching Applications Features · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1452/2SD2201-applied equipment. -High density surface mount applications. -Small size of 2SB1452/2SD2201-applied equipment. · Low colle

Sanyo Semicon Device
Sanyo Semicon Device
pdf
5 2SD2202
PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number:EN3249 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1454/2SD2202 High-Current Switching Applications Features · Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2041A [2SB1454/2SD2202] ( ) : 2SB1454 Specifications 1 : Base 2 : Collector 3 : Emitter SANYO :

Sanyo Semicon Device
Sanyo Semicon Device
pdf
4 2SD2203
PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number:EN3250 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1455/2SD2203 80V/7A High-Current Switching Applications Features · Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2041A [2SB1455/2SD2203] ( ) : 2SB1455 Specifications 1 : Base 2 : Collector 3 : Emitter S

Sanyo Semicon Device
Sanyo Semicon Device
pdf
3 2SD2204
NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITHCING/ HAMMER DRIVE/ PULSE MOTOR DRIVE APPLICATIONS)

2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.5 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics S Collector-base voltage Collector

Toshiba Semiconductor
Toshiba Semiconductor
pdf
2 2SD2206
Silicon NPN Epitaxial Type TRANSISTOR

2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Absolute Maximum Ratings (Ta = 25°C)

Toshiba Semiconductor
Toshiba Semiconductor
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