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Datasheet 2SD2144 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SD2144 | High-current Gain MediumPower Transistor (20V/ 0.5A) Transistors
High-current Gain Medium Power Transistor (20V, 0.5A)
2SD2114K / 2SD2144S
FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon t |
 ROHM Semiconductor |
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| 1 | 2SD2144S | High-current Gain MediumPower Transistor (20V/ 0.5A) Transistors
High-current Gain Medium Power Transistor (20V, 0.5A)
2SD2114K / 2SD2144S
FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon t |
ROHM Semiconductor |
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