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Datasheet 2SD2098 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SD2098 | Low VCE(sat) Transistor(Strobe flash) Transistors
Low VCE(sat) Transistor(Strobe flash)
2SD2098 / 2SD2118 / 2SD2097 / 2SD2166
FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. FStructure Epitaxial planar type N |
 ROHM Semiconductor |
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| 4 | 2SD2098 | NPN Plastic-Encapsulate Transistor 2SD2098
NPN Plastic-Encapsulate Transistor
SOT-89
1
1. BASE 2. COLLECTOR 3. EMITTER
2
3
C) ABSOLUTE MAXIMUM RATINGS (Ta=25%
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC I CP Collector Power Dissipation Junction Temperature |
 Weitron Technology |
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| 3 | 2SD2098 | Transistor SMD Type
Low VCE(sat) Transistor 2SD2098
SOT-89
+0.1 4.50-0.1 +0.1 1.80-0.1
Transistors
Unit: mm
+0.1 1.50-0.1
Features
Excellent DC current gain characteristics.
+0.1 4.00-0.1
Low VCE(sat).
1
NPN silicon transistor.
+0.1 0.48-0.1
2
3
+0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1
+0.1 2.50-0.1
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 Kexin |
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| 2 | 2SD2098 | NPN Silicon Epitaxial PlanarTransistor 2SD2098
Elektronische Bauelemente
RoHS Compliant Product
NPN Silicon Epitaxial Planar Transistor
SOT-89
Description
The 2SD2098 is an epitaxial planar type NPN silicon transistor.
Features
* Excellent DC Current Gain Characteristics * Low Saturation Voltage, Typically VCE(SAT)=0.25V At IC/IB=4A/0 |
 SeCoS |
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