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Datasheet 2SD2012 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SD2012 | NPN Silicon Power Transistors MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth
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2SD2012
Features
• High DC Current Gain: hFE(1) =100 (Min.) • Low Saturation Voltage: VCE(sat)=1.0V (Max.) • High Power Dissipation: PC=25W |
 MCC |
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| 4 | 2SD2012 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
2SD2012 TRANSISTOR (NPN)
FEATURES z High DC Current Gain z Low Saturation Voltage z High Power Dissipation
TO – 220
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol |
 JCST |
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| 3 | 2SD2012 | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2012
Audio Frequency Power Amplifier Applications
2SD2012
Unit: mm
• Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Characteri |
 Toshiba Semiconductor |
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| 2 | 2SD2012 | NPN SILICON POWER TRANSISTOR
®
2SD2012
NPN SILICON POWER TRANSISTOR
s s s
HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING
APPLICATIONS GENERAL PURPOSE POWER AMPLIFIERS s GENERAL PURPOSE SWITCHING
s
DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO-2 |
 STMicroelectronics |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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