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Datasheet 2SD201 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12SD201SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD201 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Large current capability ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter
SavantIC
SavantIC
transistor
22SD2010NPN Transistor

ROHM Semiconductor
ROHM Semiconductor
transistor
32SD2012NPN Silicon Power Transistors

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • High DC Current Gain: hFE(1) =100 (Min.) • Low Saturation Voltage: VCE(sat)=1.0V (Max.) • High Power Dissipation: PC=25W
MCC
MCC
transistor
42SD2012NPN Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2012 TRANSISTOR (NPN) FEATURES z High DC Current Gain z Low Saturation Voltage z High Power Dissipation TO – 220 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol
JCST
JCST
transistor
52SD2012Silicon NPN Triple Diffused Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteri
Toshiba Semiconductor
Toshiba Semiconductor
transistor


2SD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12SD0592ASilicon NPN epitaxial planar type

www.DataSheet4U.net Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 • Large collector power dissipation PC • Low collector-emitter saturation voltage V
Panasonic Semiconductor
Panasonic Semiconductor
transistor
22SD0601Silicon NPN epitaxial planer type

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 –0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type pac
Panasonic Semiconductor
Panasonic Semiconductor
transistor
32SD0601ASilicon NPN epitaxial planer type Transistor

Transistor 2SD0601A (2SD601A) Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) I Features G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and a
Panasonic Semiconductor
Panasonic Semiconductor
transistor
42SD0602Silicon NPN epitaxial planer type

Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t
Panasonic Semiconductor
Panasonic Semiconductor
transistor
52SD0602ASilicon NPN epitaxial planer type

Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t
Panasonic Semiconductor
Panasonic Semiconductor
transistor
62SD0638Silicon NPN epitaxial planar type

www.DataSheet4U.net Transistors 2SD0638 (2SD638) Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) (0.4) (1.5) (1.5) Unit: mm 6.9±0.1 2.5±0.1 (1.0) 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitt
Panasonic Semiconductor
Panasonic Semiconductor
transistor
72SD0662Silicon NPN epitaxial planar type

www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) 2.0±0.2 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT •
Panasonic Semiconductor
Panasonic Semiconductor
transistor



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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