Datasheet 2SD1409A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SD1409A	NPN TRIPLE DIFFUSED TYPE (IGNITER/ HIGH VOLTAGE SWITCHING APPLICATIONS) 2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1409A High Voltage Switching Applications Industrial Applications Unit: mm • • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) Monolithic construction with built-in base-emitter shunt resistor Absolute M	Toshiba Semiconductor

2SD14 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SD1460	High Current Switching Applications w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c	Toshiba
2SD1415	Silicon NPN Power Transistors Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1415 DESCRIPTION ¡¤ With TO-220Fa package ¡¤ High DC current gain ¡¤ Low saturation voltage ¡¤ Complement to type 2SB1020 APPLICATIONS ¡¤ ¡¤ High power switching applications	JMnic
2SD1415A	Silicon NPN Triple Diffused Type TRANSISTOR 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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