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Datasheet 2SD1126 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | 2SD1126 | Silicon NPN Triple Diffused 2SD1126(K)
Silicon NPN Triple Diffused
Application
Power switching
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter ID 1.5 kΩ (Typ) 130 Ω (Typ) 3
1
2 3
2SD1126(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base |
Hitachi Semiconductor |
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4 | 2SD1126 | Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1126
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Saturation Voltage
APPLICATIONS ·Designed for p |
Inchange Semiconductor |
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3 | 2SD1126 | Silicon NPN Triple Diffused To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i |
Renesas |
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2 | 2SD1126K | Silicon NPN Triple Diffused 2SD1126(K)
Silicon NPN Triple Diffused
Application
Power switching
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter ID 1.5 kΩ (Typ) 130 Ω (Typ) 3
1
2 3
2SD1126(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base |
Hitachi Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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