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Datasheet 2SD1119 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SD1119 | Silicon NPN epitaxial planer type(For low-frequency power amplification0 Transistor
2SD1119
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
s Features
2.6±0.1
4.5±0.1 1.6±0.2
1.5±0.1
q q
q
Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supp |
 Panasonic Semiconductor |
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| 2 | 2SD1119 | Silicon NPN epitaxial planar type SMD Type
Silicon NPN epitaxial planar type 2SD1119
Transistors
Features
Low collector-emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the lowvoltage power supply.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter v |
 Kexin |
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| 1 | 2SD1119 | TRANSISTOR 2SD1119
SOT-89
1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Tempe |
 Jin Yu Semiconductor |
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