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Datasheet 2SD1113 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | 2SD1113 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1113
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min) ·High DC Current Gain
: hFE= 500(Min) @IC= 4A
APPLICATIONS ·Igniter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAME |
Inchange Semiconductor |
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4 | 2SD1113 | Silicon NPN Triple Diffused 2SD1113(K)
Silicon NPN Triple Diffused
Application
Igniter
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
6 kΩ (Typ)
450 Ω (Typ) 3
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cur |
Hitachi Semiconductor |
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3 | 2SD1113 | Silicon NPN Triple Diffused To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i |
Renesas |
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2 | 2SD1113K | Silicon NPN Triple Diffused 2SD1113(K)
Silicon NPN Triple Diffused
Application
Igniter
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
6 kΩ (Typ)
450 Ω (Typ) 3
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cur |
Hitachi Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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