No | Part number | Description ( Function ) | Manufacturers | |
7 | 2SD1047 | POWER TRANSISTORS(12A/140V/100W) A A A |
Mospec Semiconductor |
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6 | 2SD1047 | NPN Triple Diffused Planar Silicon Transistors Ordering number:ENN680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of on-chip ballast resistance. · Good depened |
Sanyo Semicon Device |
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5 | 2SD1047 | NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) 2SD1047 AUDIO POWER AMPLIFIER DC TO DC CONVERTER NPN PLANAR SILICON TRANSISTOR SC-65 ! ! ! High Current Capability High Power Dissipation Complementary to 2SB817 ABSOLUTE MAXIMUM RATING (TA=25℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symb |
Wing Shing Computer Components |
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4 | 2SD1047 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1047 DESCRIPTION ·Complement to type 2SB817 ·With TO-3PN package APPLICATIONS ·Power amplification ·Low frequency and audio band PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum r |
SavantIC |
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3 | 2SD1047 | Transistor TIGER ELECTRONIC CO.,LTD Product specification Complementary Silicon Power Ttransistors 2SD1047 / 2SB817 DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junct |
TGS |
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2 | 2SD1047 | High power NPN epitaxial planar bipolar transistor 2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behavi |
STMicroelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |