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2SD1047 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
7 2SD1047
Transistor

TIGER ELECTRONIC CO.,LTD Product specification Complementary Silicon Power Ttransistors 2SD1047 / 2SB817 DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junct

TGS
TGS
pdf
6 2SD1047
SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1047 DESCRIPTION ·Complement to type 2SB817 ·With TO-3PN package APPLICATIONS ·Power amplification ·Low frequency and audio band PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum r

SavantIC
SavantIC
pdf
5 2SD1047
POWER TRANSISTORS(12A/140V/100W)

A A A

Mospec Semiconductor
Mospec Semiconductor
pdf
4 2SD1047
NPN Triple Diffused Planar Silicon Transistors

Ordering number:ENN680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of on-chip ballast resistance. · Good depened

Sanyo Semicon Device
Sanyo Semicon Device
pdf
3 2SD1047
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

2SD1047 AUDIO POWER AMPLIFIER DC TO DC CONVERTER NPN PLANAR SILICON TRANSISTOR SC-65 ! ! ! High Current Capability High Power Dissipation Complementary to 2SB817 ABSOLUTE MAXIMUM RATING (TA=25℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symb

Wing Shing Computer Components
Wing Shing Computer Components
pdf
2 2SD1047
High power NPN epitaxial planar bipolar transistor

2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behavi

STMicroelectronics
STMicroelectronics
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