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No Part number Description ( Function ) Manufacturers PDF
2467 2SD0592A
Silicon NPN epitaxial planar type

Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-ba

Panasonic Semiconductor
Panasonic Semiconductor
pdf
2466 2SD0601
Silicon NPN epitaxial planer type

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 –0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the t

Panasonic Semiconductor
Panasonic Semiconductor
pdf
2465 2SD0601A
Silicon NPN epitaxial planer type Transistor

Transistor 2SD0601A (2SD601A) Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) I Features G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. I Absolut

Panasonic Semiconductor
Panasonic Semiconductor
pdf
2464 2SD0602
Silicon NPN epitaxial planer type

Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.

Panasonic Semiconductor
Panasonic Semiconductor
pdf
2463 2SD0602A
Silicon NPN epitaxial planer type

Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.

Panasonic Semiconductor
Panasonic Semiconductor
pdf
2462 2SD0638
Silicon NPN epitaxial planar type

Transistors 2SD0638 (2SD638) Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) (0.4) (1.5) (1.5) Unit: mm 6.9±0.1 2.5±0.1 (1.0) 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector o

Panasonic Semiconductor
Panasonic Semiconductor
pdf



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