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Datasheet 2SC607 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | 2SC607 | (2SC960 / 2SC959 / 2SC606 / 2SC607) PNP/NPN SILICON EPITAXIAL TRANSISTOR |
 ETC |
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| 7 | 2SC6071 | NPN Epitaxial Planar Silicon Transistor
Ordering number : ENA0271
2SC6071
SANYO Semiconductors
DATA SHEET
2SC6071
Applications
•
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Relay drivers, lamp drivers, motor drivers.
Features
• • • •
Adoption of MBIT process. Large cu |
 Sanyo Semicon Device |
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| 6 | 2SC6072 | Multi-chip Device Silicon NPN Epitaxial Transistor 2SC6072
TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type
2SC6072
Power Amplifier Applications Driver Stage Amplifier Applications
Unit: mm
・High transition frequency: fT = 200 MHz (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter |
 Toshiba |
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| 5 | 2SC6075 | Silicon NPN Epitaxial Type 2SC6075
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6075
Power Amplifier Applications Power Switching Applications
Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ)
Unit: mm
Absolute Maximum Ratings |
 Toshiba Semiconductor |
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