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Datasheet 2SC606 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | 2SC606 | (2SC605 / 2SC606) NPN SILICON TRANSISTOR |
 ETC |
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| 6 | 2SC606 | (2SC960 / 2SC959 / 2SC606 / 2SC607) PNP/NPN SILICON EPITAXIAL TRANSISTOR |
ETC |
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| 5 | 2SC6060 | Transistor Silicon NPN Epitaxial Type 2SC6060
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6060
Power Amplifier Applications Driver Stage Amplifier Applications
・High-transition frequency: fT = 100 MHz (typ.) Unit: mm
Absolute Maximum Ratings (Tc = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-ba |
 Toshiba |
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| 4 | 2SC6061 | Silicon NPN Epitaxial Type 2SC6061
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6061
High-Speed Switching Applications DC-DC Converter Applications
・High-DC current gain: hFE = 120 to 300 (IC = 0.1 A)
0.95 0.95 2.9±0.2 1.9±0.2
Unit: mm
+0.2 2.8-0.3 +0.2 1.6-0.1
・Low-collector-emitter saturation: VCE (sat) = 0.14 |
Toshiba |
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