No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SC6026CT | General Purpose Amplifier Applications 2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications • • • • High voltage and high current : VCEO = 50V, IC = 100mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) High hFE : hFE = 120 to 400 Complementary to 2SA2154CT 1.0±0.05 0.25±0.03 3 0.65±0.02 0.05±0.03 0.6±0.0 |
Toshiba |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
2SC6026 | Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications • • • • • Unit: mm 0.15±0.05 High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 |
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2SC6026MFV | Transistor Silicon NPN Epitaxial Type 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications • • • • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 0.8 |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |