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2SC5778 PDF Datasheet

The 2SC5778 is Ultrahigh-definition Crt Display Horizontal Deflection Output ApplICations. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 2SC5778
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ordering number : ENN6992 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Package Dimensions unit :

Sanyo Semicon Device
Sanyo Semicon Device
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Recommended search results related to 2SC5778

Part No Description ( Function) Manufacturers PDF
2SC5700   Silicon NPN Epitaxial VHF/UHF wide band amplifier

2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1435 (Z) Rev.0 Jul. 2001 Features • High power gain low noise figure at low power operation: |S21| = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) 2 Outline MFPAK 3 1 2 1. Emitter 2. Base 3.

Hitachi Semiconductor
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2SC5700   Silicon NPN Epitaxial

2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier REJ03G0751-0100 (Previous ADE-208-1435) Rev.1.00 Aug.10.2005 Features • High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline RENESAS P

Renesas
Renesas
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2SC5702   Silicon NPN Epitaxial

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003

Renesas
Renesas
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2SC5702   Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-1414 (Z) 1st. Edition Mar. 2001 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz Outline MFPAK 3 1 2

Hitachi
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2SC5703   TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • • • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) Hi

Toshiba Semiconductor
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