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2SC5426 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
82 2SC5404
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE

2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS Unit: mm l High Voltage : VCBO = 1500 V l Low Saturation Voltage : VCE (sat) = 3 V (Max.) l High Speed : tf = 0.15 µs (Typ.) l Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATIN

Toshiba Semiconductor
Toshiba Semiconductor
pdf
81 2SC5404
SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC5404 Fig.

SavantIC
SavantIC
pdf
80 2SC5405
Silicon NPN triple diffusion planar type

Power Transistors 2SC5405 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit: mm s Features q q 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 q High-speed switching High forward current transfer ratio hFE which has satisfactory linearity Dielectric breakdown voltage of the package: > 5kV (TC=25˚C) Ratings 80 50 6 6 3 1 20 2.

Panasonic Semiconductor
Panasonic Semiconductor
pdf
79 2SC5406
Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 20 14 8 100 3 150 –55 to +150 Unit V V V V A A A W ˚C

Panasonic Semiconductor
Panasonic Semiconductor
pdf
78 2SC5406A
Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 20 14 8 100 3 150 –55 to +150 Unit V V V V A A A W ˚C

Panasonic Semiconductor
Panasonic Semiconductor
pdf
77 2SC5407
Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1700 1700 600 5 20 15 8 100 3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0

Panasonic Semiconductor
Panasonic Semiconductor
pdf


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