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2SC5200 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
9 2SC5200
SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5200 DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943 APPLICATIONS ·High current switching ·Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplifi

SavantIC
SavantIC
pdf
8 2SC5200
POWER AMPLIFIER APPLICATION

Free Datasheet http:// / Free Datasheet http:// /

New Jersey Semi-Conductor
New Jersey Semi-Conductor
pdf
7 2SC5200
NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm • • • High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Coll

Toshiba Semiconductor
Toshiba Semiconductor
pdf
6 2SC5200
NPN Epitaxial Silicon Transistor

UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS  FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943  ORDERING INFORMATION Order Number Lead Free Halogen Free 2SC5200-x-T3L-T 2SC5200-x-T3L-T Package TO-3PL Pin Assignment 123 BCE Packing Tube

Unisonic
Unisonic
pdf
5 2SC5200
NPN Epitaxial Silicon Transistor

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement t

Fairchild Semiconductor
Fairchild Semiconductor
pdf
4 2SC5200
High power NPN epitaxial planar bipolar transistor

2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t(s)Application c■ Audio power amplifier roduDescription PThis device is a NPN transistor manufactured teusing new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor Obsolete Product(s) - Ob

STMicroelectronics
STMicroelectronics
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