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2SC5177 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 2SC5177
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Current Consumption and High Gain |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 0.4 –0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 –0.15 +0.1

NEC
NEC
pdf

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2SC51 Data sheets

Part No Description ( Function) Manufacturers PDF
2SC5198   NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • • • High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifier’s output stage

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
2SC5171   NPN EPITAXIAL TYPE (POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS)

2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm • • High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Absolute Maximum Ratings (Tc = 25°C) Characteristics Collec

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
2SC517   NPN Transistor

ETC
ETC
datasheet pdf



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