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2SC4177 PDF Datasheet

The 2SC4177 is Transistor, NPN SilICon Epitaxia. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
6 2SC4177
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

NEC
NEC
pdf
5 2SC4177
NPN Silicon Epitaxia

SMD Type NPN Silicon Epitaxia 2SC4177 Features High dc current gain High voltage. Transistors IC 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 60 50 5 100

Kexin
Kexin
pdf
4 2SC4177
NPN Plastic-Encapsulate Transistor

2SC4177 Elektronische Bauelemente 0.1A , 60V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    SOT-323 A 3 3 High DC Current Gain. High Voltage. Complementary to 2SA1611 1 L Top View 2 C B 1 2 APPLICATIONS  K E D General Purpose Amplification F G H J CLASSIFICATION OF hFE Product-Ra

SeCoS
SeCoS
pdf
3 2SC4177
TRANSISTOR

2SC4177 TRANSISTOR (NPN) FEATURES  High DC Current Gain  Complementary to 2SA1611  High Voltage APPLICATIONS  General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Re

Jin Yu Semiconductor
Jin Yu Semiconductor
pdf
2 2SC4177
NPN EPITAXIAL SILICON TRANSISTOR

RoHS 2SC4177 2SC4177 DFEATURES TRANSISTOR (NPN ) TPower dissipation .,LPCM: 0.15 W (Tamb=25℃) 1. 01 REF 0. 30 2. 00¡ À0. 05 Collector current OICM: 0.1 A Collector-base voltage CV(BR)CBO: 60 V 1. 30¡ À0. 03 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-323 1. BASE 2. EMITTER 3. COLLECTOR 1. 25¡ À0. 05 2. 30¡ À0. 05

WEJ
WEJ
pdf
1 2SC4177W
Silicon Epitaxial Planar Transistor

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z z Excellent hFE linearity. High voltage and current. Complementary to 2SA1611. Small package. Production specification 2SC4177W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier. SOT-323 ORDERING INFORMATION Type No. 2SC4177W Marking L4▪//L5▪/L6▪/L7▪ Package Code SOT-323 M

Galaxy Semi-Conductor
Galaxy Semi-Conductor
pdf

[1]    

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Vishay Semiconductor
Vishay
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