2SC3807 PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 5 | 2SC3807 | TRANSISTOR RoHS 2SC3807 2SC3807 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-126C 1.25 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter br |
 WEJ |
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| 4 | 2SC3807 | SILICON NPN TRANSISTOR 2SC3807(3DA3807) 硅 NPN 半导体三极管/SILION NPN TRANSISTOR 用途:用于低频放大和驱动。 Purpose: low frequency general-purpose amplifiers, drivers. 特点: IC 大, hFE 高,VCE(sat)低,VEBO 高。 Features: Large current capacity, high DC current gain, Low collector-to-emitter saturation voltage High VEBO. 极限参数/Absolute maximum ratings(Ta=25℃) 参 |
 Foshan Eming Electronics |
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| 3 | 2SC3807 | NPN Epitaxial Planar Silicon Transistor Ordering number:EN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers. Package Dimensions unit:mm 2043A [2SC3807] Features · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3 |
 Sanyo Semicon Device |
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| 2 | 2SC3807C | NPN Epitaxial Planar Silicon Transistor Ordering number : ENA0439 2SC3807C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807C Applications • 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Low-frequency general-purpose amplifiers, drivers. Features • • • • • Large current capacity (IC=2A). Adoption of MBIT process. High DC |
Sanyo Semicon Device |
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| 1 | 2SC3807MP | NPN Epitaxial Planar Silicon Transistor Ordering number : ENA0629 2SC3807MP SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807MP Applications • 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Low-frequency general-purpose amplifiers, drivers. Features • • • • • Large current capacity (IC=2A). Adoption of MBIT process. High D |
Sanyo Semicon Device |
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