| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 2SC3358 | NPN Silicon Epitaxial Transistor UTC 2SC3358 NPN SILICON EPITAXIALTRANSISTOR 3 HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 4 1 TO-50 1:COLLECTOR 2:EMITTER 3:BASE 4:EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junc |
 Unisonic Technologies |
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Search Result Starting with '2SC33' |
| Part No | Description ( Function) | Manufacturers | |
| 2SC3353 | Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3353 DESCRIPTION ·Collector-Emiiter Sustaining Voltage: VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching |
 Inchange Semiconductor |
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| 2SC3324 | Silicon NPN Epitaxial SMD Type Silicon NPN Epitaxial 2SC3324 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High hFE.hFE=200 to 700 Low noise. Small package. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High voltageVCEO=120V 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0 |
 Kexin |
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| 2SC3393 | High-Speed Switching Applications Ordering number:EN1392A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1339/2SC3393 High-Speed Switching Applications Features · Very small-sized package permitting sets to be smallsized, slim. · High breakdown voltage : VCEO=(–)50V. · Complementary pair transistor having |
 Sanyo Semicon Device |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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| 6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA | |||