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Datasheet 2SC3355 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SC3355 | Diode ( Rectifier ) |
 American Microsemiconductor |
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| 4 | 2SC3355 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC3355
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristi |
 NEC |
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| 3 | 2SC3355 | NPN Silicon Transistor UNISONIC TECHNOLOGIES CO., LTD
2SC3355
NPN SILICON EPITAXIAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER
FEATURES
* Low Noise and High Gain * High Power Gain
1 TO-92
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SC3355L-T92-B
2SC3355G-T92-B
2SC3355L-T92-K
2SC335 |
 Unisonic Technologies |
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| 2 | 2SC3355 | Silicon NPN RF Transistor INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3355
DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz ·High Power Gain MAG = 1 |
 Inchange Semiconductor |
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