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2SC1971 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
4 2SC1971
Trans GP BJT NPN 17V 2A 3-Pin(3+Tab) TO-220

New Jersey Semiconductor
New Jersey Semiconductor
pdf
3 2SC1971
Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1971 DESCRIPTION ·High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Bas

Inchange Semiconductor
Inchange Semiconductor
pdf
2 2SC1971
NPN SILICON RF POWER TRANSISTOR

2SC1971 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • • • Replaces Original 2SC1971 in Most Applications High Gain Reduces Drive Requirements Economical TO-220CE Package PACKAGE STYLE TO-220AB (COMMON EMITTER) MAXIMUM RATINGS IC VCBO PDISS TSTG θJC 2.0 A 35 V

Advanced Semiconductor
Advanced Semiconductor
pdf
1 2SC1971
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
pdf


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