No | Part number | Description ( Function ) | Manufacturers | |
3 | 2SC1969 | NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications) w w w .d e e h s a t a . u t4 m o c |
Mitsubishi Electric Semiconductor |
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2 | 2SC1969 | silicon NPN epitaxial planar type transistor Description The Eleflow 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the HF band, ideal for mobile radio applications. Features • High power gain: Gpe ≥ 12dB @Vcc = 12V, Po = 16W, f = 27MHz • Emitter ballasted construction for reliability and performance. • Manufactured incorporating recyclable RoHS compliant material |
eleflow |
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1 | 2SC1969 | Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC1969 DESCRIPTION ·High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCE |
INCHANGE |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |