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2SC1623 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
19 2SC1623
Silicon PNP Epitaxial Type Transistor

2SC1623 Silicon PNP Epitaxial Type Transistor Features • High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA). • High Voltage:VCEO=50V • RoHS compliant package Applications NPN Silicon Epitaxial Planar Transistor. Audio frequency general purpose amplifier. Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [2SC1623] © Bruckewell Technology C

Bruckewell
Bruckewell
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18 2SC1623
Silicon NPN transistor

2SC1623 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 / Features 高 hFE,高 VCEO,与 2SA812 互补。 High hFE and VCEO, complementary pair with 2SA812. 用途 / Applications 用于一般音频放大。 Audio frequency general amplifier application. 内部等效

BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS
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17 2SC1623
Silicon Epitaxial Planar Transistor

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) z High Voltage:VCEO=50V Production specification 2SC1623 Pb Lead-free APPLICATIONS z z NPN Silicon Epitaxial Planar Transistor Audio frequency general purpose amplifier. SOT-23 ORDERING INFORMATION Type No. 2SC1623 Marking L4/L5/L6/L7 Package Code SOT-23

Galaxy Semi-Conductor
Galaxy Semi-Conductor
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16 2SC1623
Plastic-Encapsulate Transistors

Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 FEATURES Power dissipation TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 PCM: 200 mW (Tamb=25℃) 0. 025 0. 95¡ À 2. 80¡ À 0. 05 1. 60¡ À0. 05 Collector current mA ICM: 100 Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range TJ

TRANSYS
TRANSYS
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15 2SC1623
NPN Transistor

FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V Plastic-Encapsulate Transistors 2SC1623 (NPN) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO 60

HOTTECH
HOTTECH
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14 2SC1623
NPN Silicon Transistor

SMD Type NPN Silicon Transistor 2SC1623 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA High Voltage: VCE O = 50 V +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Coll

Kexin
Kexin
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