No | Part number | Description ( Function ) | Manufacturers | |
16 | 2SB772 | PNP Silicon Power Transistor 2SB772 PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current (t = 10 ms) Base Curren |
BLUECOLOUR |
|
15 | 2SB772 | PNP EPITAXIAL PLANAR TRANSISTOR DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SB772 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver. Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Vol |
DC COMPONENTS |
|
14 | 2SB772 | MEDIUM POWER LOW VOLTAGE TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882 ORDERING INFORMATION Ordering Number |
Unisonic Technologies |
|
13 | 2SB772 | PNP SILICON POWER TRANSISTOR DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR DESCRIPTION The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver. PACKAGE DRAWING (Unit: mm) 8.5 MAX. 3.2 ±0.2 3.8 ±0.2 2.8 MAX. FEATURES • Low saturation voltage VCE(sat) ≤ −0.5 V |
NEC |
|
12 | 2SB772 | PNP MEDIUM POWER TRANSISTOR 2SB772 PNP medium power transistor Features ■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay driver ■ Generic switch ■ Audio power amplifier ■ DC-DC converter Description The device is a PNP transistor manufactured by using planar Technology resulting in rugged high performance devices. The complementary N |
ST Microelectronics |
|
11 | 2SB772 | Plastic Encapsulate Transistors 2SB772 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free PNP Type Plastic Encapsulate Transistors Features * Power Dissipation: PCM: 625 mW (Tamb=25oC) 4.55±0.2 TO-92 3.5±0.2 4.5±0.2 o MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage |
SeCoS |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |