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2SB649A PDF Datasheet

The 2SB649A is PNP Transistor, SilICon PNP Epitaxial. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
7 2SB649A
Silicon PNP Epitaxial

2SB649, 2SB649A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SB649, 2SB649A Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power

Hitachi Semiconductor
Hitachi Semiconductor
pdf
6 2SB649A
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SB649/A BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A PNP SILICON TRANSISTOR 1 SOT-89 1 TO-126 1 TO-126C 1 TO-92 *Pb-free plating product number: 2SB649L/2SB649AL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB649-x-AB3-R 2SB

Unisonic Technologies
Unisonic Technologies
pdf
5 2SB649A
PNP Epitaxial Planar Transistors

2SB649/2SB649A PNP Epitaxial Planar Transistors P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Disspation Junction Temperature Storage Temperature Symbol VCBO VCEO V EBO IC PD Tj Tstg -120 6.0 -1.5 1.0

Weitron Technology
Weitron Technology
pdf
4 2SB649A
TO-126C Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-126C Plastic-Encapsulated Transistors 2SB649/2SB649A FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER 2. COLLECTOR 3. BASE TRANSISTOR (PNP) TO-126C Collector current -1.5 A ICM: Collector-base voltage V V(BR)CBO : -180 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 123 ELECTRICAL CHARACTERISTICS

TRANSYS Electronics
TRANSYS Electronics
pdf
3 2SB649A
PNP Type Plastic Encapsulate Transistors

2SB649/2SB649A Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free PNP Type Plastic Encapsulate Transistors TO-126C 8.0±0.2 2.0±0.2 4.14±0.1 3.2±0.2 FEATURES Power smplifier applications Power dissipation PCM : 1 W £¨ Tamb=25¡æ £© Collector current ICM : - 1.5 A Collector-base voltage V(BR)CBO : -180 V Collector-emitter v

SeCoS
SeCoS
pdf
2 2SB649A
PNP Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -180 V 3. BASE VCEO Collector-E

JCST
JCST
pdf

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