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2SB631 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
8 2SB631
SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION ·With TO-126 package ·Complement to type 2SD600/K ·High breakdown voltage VCEO:-100/-120V ·High current: -1A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications PINNING PIN 1 2 3 Emitter Coll

SavantIC
SavantIC
pdf
7 2SB631
PNP / NPN Epitaxial Planar Silicon Transistors

Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0

ON Semiconductor
ON Semiconductor
pdf
6 2SB631
100V/120V/ 1A Low-Frequency Power Amplifier Applications

Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 :

Sanyo Semicon Device
Sanyo Semicon Device
pdf
5 2SB631
100V/120V/ 1A Low-Frequency Power Amp Applications

Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 :

Sanyo Semicon Device
Sanyo Semicon Device
pdf
4 2SB631K
SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION ·With TO-126 package ·Complement to type 2SD600/K ·High breakdown voltage VCEO:-100/-120V ·High current: -1A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications PINNING PIN 1 2 3 Emitter Coll

SavantIC
SavantIC
pdf
3 2SB631K
PNP / NPN Epitaxial Planar Silicon Transistors

Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0

ON Semiconductor
ON Semiconductor
pdf


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