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Datasheet 2SB1424 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | 2SB1424 | Low Vce(sat) Transistor (-20V/ -3A) Transistors
Low VCE(sat) Transistor (*20V, *3A)
2SB1424 / 2SA1585S
FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. FStructure Epitaxial planar type PNP silicon transistor FExternal dimens |
 ROHM Semiconductor |
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| 6 | 2SB1424 | Epitaxial Planar PNP Transistors 2SB1424
Epitaxial Planar PNP Transistors
P b Lead(Pb)-Free
1
1. BASE 2. COLLECTOR 3. EMITTER
SOT-89
2
3
C) ABSOLUTE MAXIMUM RATINGS (Ta=25%
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature, Storage Temp |
 Weitron Technology |
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| 5 | 2SB1424 | Plastic-Encapsulate Transistors Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulate Transistors
2SB1424
FEATURES Power dissipation PCM: 600 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3
TRANSISTOR (PNP)
SOT-89
1. BASE
Collector current -3 A ICM: Collector-base voltage -20 V V(BR)CBO: Operating and storage junction tem |
 TRANSYS |
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| 4 | 2SB1424 | Transistor SMD Type
Low VCE(sat) Transistor 2SB1424
Transistors
Features
Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base volt |
 Kexin |
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