pdf datasheet site - dataSheet39.com


2SB1424 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
7 2SB1424
Transistor

SMD Type Low VCE(sat) Transistor 2SB1424 Transistors Features Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage tempera

Kexin
Kexin
pdf
6 2SB1424
TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SB1424 LOW VCE(SAT) „ DESCRIPTION Preliminary PNP SILICON TRANSISTOR TRANSISTOR As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). „ FEATURES * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A) Lead-free: 2SB142

UTC
UTC
pdf
5 2SB1424
TRANSISTOR

2SB1 424 TRANSISTOR(PNP) SOT-89-3L FEATURES    Excellent DC Current Gain Low Collector-emitter saturation voltage Complement the 2SD2150 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collect

Jin Yu Semiconductor
Jin Yu Semiconductor
pdf
4 2SB1424
PNP Silicon Medium Power Transistor

2SB1424 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free D D1 A PNP Silicon Medium Power Transistor     E1 b1 1.BASE SOT-89  b L 2.COLLECTOR  3. EMITTER E e e1 C FEATURES Symbol Dimensions In Millimeters Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 2.900 0.900 3.100 1.100 Max 1.600 0.520 0.560 0.44

SeCoS
SeCoS
pdf
3 2SB1424
Plastic-Encapsulate Transistors

Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulate Transistors 2SB1424 FEATURES Power dissipation PCM: 600 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current -3 A ICM: Collector-base voltage -20 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25

TRANSYS
TRANSYS
pdf
2 2SB1424
Low Vce(sat) Transistor (-20V/ -3A)

Transistors Low VCE(sat) Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) (96-596-A74) 201 Tran

Rohm
Rohm
pdf



Share Link

[1] [2] 

DataSheet39.com offers a large amount of data sheet, You can free PDF files download.
The updated every day, always provide the best quality and speed.

Sitemap Link

Index : 1N  2SC  74H  AD  BC  IRF  LM  TD  New  Sitemap  2SB


DataSheet39.com    |   2019    |  Privacy Policy  |  Contact Us