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2SB1412 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
7 2SB1412
SILICON PNP TRANSISTOR

2SB1412(3CA1412) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于中功率放大。 Purpose: Medium power amplifier applications. 特点:饱和压降低,极好的直流电流增益特性,与 2SD2118(3DG2118)互补。 Features: Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118(3DG2118). 极限参数/Absolute maximum ratings(T

LZG
LZG
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6 2SB1412
Silicon PNP Power Transistor

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1412 DESCRIPTION ·Small and slim package making it easy to make 2SB1205-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOL

Inchange Semiconductor
Inchange Semiconductor
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5 2SB1412
PNP Silicon Low Frequency Transistor

Elektronische Bauelemente 2SB1412 -5A , -30V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Designed for general Low VCE(sat) D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SB1412-P 2SB1412-Q Range 82~180 120~270 2SB1412-R 180~390 A BC D PACKAGE INFORMATION Package MPQ TO-252 2.5K Leade

SeCoS
SeCoS
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4 2SB1412
PNP EPITAXIAL PLANAR TRANSISTOR

2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 2 3 Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat) 1 D-PAK(TO-252) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Cu

Weitron Technology
Weitron Technology
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3 2SB1412
Low Frequency Transistor

Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC-63 ∗ Denotes hFE (1) Base (2) Collector (3) Emitter zAbsolute

Rohm
Rohm
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2 2SB1412
Low Frequency Transistor

SMD Type Low Frequency Transistor 2SB1412 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 PNP silicon transistor. 1 Base 2 Collector 3 Emitter Ab

Kexin
Kexin
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