| No | Part number | Description ( Function ) | Manufacturers | |
| 11 | 2SB1132 | Medium Power Transistor Transistors Medium Power Transistor (*32V, *1A) 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm) (96-120-B12) 207 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SB1132 / 2SA1515S / 2SB12 |
 ROHM Semiconductor |
|
| 10 | 2SB1132 | PNP Plastic-Encapsulate Transistors 2SB1132 PNP Plastic-Encapsulate Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C) ABSOLUTE MAXIMUM RATINGS (Ta=25% Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC ICP Collector Power Dissipation Junction Temperature, Storage Temperature * Single pulse Pw = 100ms Value -40 - |
 Weitron Technology |
|
| 9 | 2SB1132 | MEDIUM POWER TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SB1132 MEDIUM POWER TRANSISTOR 1 PNP SILICON TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) 1 TO-252 *Pb-free plating product number: 2SB1132L ORDERING INFORMATION Order Number Package Normal Lead Free Plating www.DataSh |
 Unisonic Technologies |
|
| 8 | 2SB1132 | Transistors Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1132 FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) TRANSISTOR (PNP) SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Collector current -1 A ICM: Collector-base voltage V V(BR)CBO: -40 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25� |
 TRANSYS |
|
| 7 | 2SB1132 | Medium Power Transistor SMD Type Medium Power Transistor 2SB1132 Transistors Features Low VCE(sat) Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Single pulse, PW =100ms Collector Power Dissipation Jumction temperature Storage temperature Range * mounted on a 40x40x0.7mm ceramic board. PC |
 Kexin |
|
| 6 | 2SB1132 | PNP Silicon Medium Power Transistor 2SB1132 Elektronische Bauelemente PNP Silicon Medium Power Transistor SOT-89 D Dimensions In Millimeters Dimensions In Inches Min 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 0.060TYP Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 1.BASE 2.COLLECTOR 3.EMITTER E1 D1 A Symbol A b b1 c Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 2.900 0.900 Max 1 |
 SeCoS |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
|||