pdf datasheet site - dataSheet39.com


2SA505 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
3 2SA505
Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA505 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min.) ·Collector-Emitter Saturation Voltage- VCE(sat)= -0.8V (Max.)@ IC= -500mA APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Co

Inchange Semiconductor
Inchange Semiconductor
pdf
2 2SA505
SILICON PNP EPITAXIAL TYPE(PCT PROCESS)

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

Toshiba Semiconductor
Toshiba Semiconductor
pdf
1 2SA505
Silicon PNP epitaxial planar type

New Jersey Semiconductor
New Jersey Semiconductor
pdf



Share Link

[1] 

DataSheet39.com offers a large amount of data sheet, You can free PDF files download.
The updated every day, always provide the best quality and speed.

Sitemap Link

Index : 1N  2SC  74H  AD  BC  IRF  LM  TD  New  Sitemap  2SA


DataSheet39.com    |   2019    |  Privacy Policy  |  Contact Us