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2SA1972 PDF Datasheet

The 2SA1972 is Transistor (high Voltage Switching ApplICations). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 2SA1972
TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications Unit: mm • High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction tempera

Toshiba Semiconductor
Toshiba Semiconductor
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2SA1900   Medium Power Transistor (-50V/ -1A)

Transistors 2SA1900 2SC5053 (96-115-B352) (96-196-D352) 297 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change wit

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2SA1900   Medium power transistor

SMD Type Medium power transistor 2SA1900 TransistIoCrs Features Low saturation voltage, typically VCE(sat) = ?0.15V at IC / IB = ?500mA / ?50mA PC=2W (on 40X40X0.7mm ceramic board) Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter Voltage Collector-base Voltage Emi

Kexin
Kexin
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2SA1900U   PNP Silicon Epitaxial Planar Transistor

2SA1900U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pw = 20 ms) Collector Power Dissipation Junction Te

SEMTECH
SEMTECH
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2SA1905   Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1905 High-Current Switching Applications. 2SA1905 Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5076 Absolute

Toshiba Semiconductor
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2SA1907   Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

2SA1907 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5099) sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1907 –80 –80 –6 –6 –3 60(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C Application : Audio and General Pur

Sanken electric
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