| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 2SA1931 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications 2SA1931 Unit: mm • Low saturation voltage: VCE (sat) = −0.4 V (max) • High-speed switching time: tstg = 1.0 µs (typ.) • Complementary to 2SC4881 Maximum Ratings (Tc = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage |
 Toshiba |
|
0 1 2 3 4 5 6 7 8 9 |
Recommended search results related to 2SA1931 |
| Part No | Description ( Function) | Manufacturers | |
| 232219314821 | Power Metal Film Resistors PR01/02/03 Vishay BCcomponents Power Metal Film Resistors FEATURES • High power in small packages (1 W/0207 size to 3 W/0617 size) • Different lead materials for different applications • Defined interruption behaviour • Lead (Pb)-free solder contacts |
 Vishay Intertechnology |
|
| 2SA1900 | Medium Power Transistor (-50V/ -1A) Transistors 2SA1900 2SC5053 (96-115-B352) (96-196-D352) 297 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change wit |
 ROHM Semiconductor |
|
| 2SA1900 | Medium power transistor SMD Type Medium power transistor 2SA1900 TransistIoCrs Features Low saturation voltage, typically VCE(sat) = ?0.15V at IC / IB = ?500mA / ?50mA PC=2W (on 40X40X0.7mm ceramic board) Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter Voltage Collector-base Voltage Emi |
 Kexin |
|
| 2SA1900U | PNP Silicon Epitaxial Planar Transistor 2SA1900U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pw = 20 ms) Collector Power Dissipation Junction Te |
 SEMTECH |
|
| 2SA1905 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1905 High-Current Switching Applications. 2SA1905 Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5076 Absolute |
 Toshiba Semiconductor |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
|||