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2SA1832-GR PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
18 2SA1830
PNP Epitaxial Planar Silicon Transistor

Ordering number:EN4409 2SA1830 : PNPEpitaxial Planar Silicon Transistor 2SC4734 ; NPN Triple Diffused Planar Silicon Transistor 2SA1830/2SC4734 High-Voltage Driver Applications Features · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). · Possible to offer the 2SA1830/2SC4734 devices in a tape reel packaging, which facilitates automatic insertion. P

Sanyo Semicon Device
Sanyo Semicon Device
pdf
17 2SA1831
PNP Triple Diffused Planar Silicon Transistors

Ordering number:EN3686A PNPTriple Diffused Planar Silicon Transistors 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=–800V). · Small Cob (Cob typ=1.6pF). · High reliabirity (Adoption of HVP processes). Package Dimensions unit:mm 2010B [2SA1831] Specifications Absolute Maximum Ratings at Ta = 25˚C Param

Sanyo Semicon Device
Sanyo Semicon Device
pdf
16 2SA1832
TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • • • High hFE: hFE = 70~400 Complementary to 2SC4738 Small package Unit: mm Absolute Max

Toshiba Semiconductor
Toshiba Semiconductor
pdf
15 2SA1832
Silicon PNP Epitaxial Type Transistor

SMD Type Silicon PNP Epitaxial Type Transistor 2SA1832 Transistors IC SOT-523 +0.1 1.6-0.1 Unit: mm Features High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.) Excellent hFE Linearity : hFE (IC=-0.1mA/ hFE(IC=-2mA)=0.95(Typ.) High hFE: hFE=70 to 400 2 1.0 +0.05 0.2-0.05 +0.1 -0.1 +0.01 0.1-0.01 1 +0.15 1.6-0.15 0.55 +0.25 0.3-0.05 +0.1 0.5-0.1 0.35 3 1. Base +

Kexin
Kexin
pdf
14 2SA1832
PNP TRANSISTOR

2SA1832 PNP TRANSISTOR P b Lead(Pb)-Free FEATURES: * High voltage and high current * Excellent hFE linearity * Complementary to 2SC4738 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol VCBO VCEO VEBO IC PD RθJA TJ Tstg Value -50 -50 -5 -150 100 125 -55 to +125 -55 to +125 Units V V V mA mW ℃/W ℃ ℃ 3 1 2 SOT-523(SC-75) Collector-Base Voltage Collector

WEITRON
WEITRON
pdf
13 2SA1832
PNP TRANSISTOR

RoHS 2SA1832 2SA1832 FEATURES Power dissipation PCM SOT-523 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR : 0.1 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emi

WEJ
WEJ
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