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2SA1338 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
3 2SA1338
Transistors

Product specification 2SA1338 SOT-23 Unit: mm Adoption of FBET process. +0.1 2.4-0.1 High breakdown voltage : VCEO=-50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.colle

TY Semiconductor
TY Semiconductor
pdf
2 2SA1338
PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number:EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features · Adoption of FBET process. · High breakdown voltage : VCEO=(–)50V. · Large current capacitiy and high fT. · Very small-sized package permitting sets to be small- sized, slim. Package Dimensions unit:mm 2018A [2SA1338/2SC3392] Switching Time

Sanyo Semicon Device
Sanyo Semicon Device
pdf
1 2SA1338
PNP Epitaxial Planar Silicon Transistors

SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1338 SOT-23 Unit: mm Adoption of FBET process. +0.1 2.4-0.1 High breakdown voltage : VCEO=-50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.

Kexin
Kexin
pdf



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