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2SA1225 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
2 2SA1225
Silicon PNP Power Transistor

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1225 DESCRIPTION ·High transition frequency ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC2983 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER

Inchange Semiconductor
Inchange Semiconductor
1 2SA1225
Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1225 Unit: mm • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −160 V Collector-emitter voltage V

Toshiba Semiconductor
Toshiba Semiconductor

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