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Datasheet 2SA1162 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | 2SA1162 | PNP Transistor FEATURES
Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package.
Plastic-Encapsulate Transistors
2SA1162(PNP)
MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junc |
 HOTTECH |
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| 9 | 2SA1162 | Silicon PNP Epitaxial Type Transistor 2SA1162
Silicon PNP Epitaxial Type Transistor
Features • High voltage and high current: VCEO = -50 V, IC = 150 mA (max) • Low noise: NF = 1dB (typ.), 10dB (max) • Small package • RoHS compliant package Mechanical Data • Case: Molded plastic • Epoxy: UL94-V0 rate flame retardant Packing & |
 Bruckewell |
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| 8 | 2SA1162 | Silicon PNP transistor 2SA1162
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
电压和集电极直流电流大,极好的放大线性,高放大,噪声系数低,与 2SC2712 互补。 High voltage and |
 BLUE ROCKET ELECTRONICS |
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| 7 | 2SA1162 | PNP EPITAXIAL SILICON TRANSISTOR RoHS
2SA1162
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQRENCY,LOW NOISE AMPLIFIER
DComplemen to 2SC2712
Collector-current:Ic=-100mA
.,LTCollector-Emiller Voltage:VCE=-45V
SOT-23
1
1. 2.4 1.3
3
2 1.BASE 2.EMITTER 3.COLLECTOR
2.9 1.9 0.95 0.95 0.4
OUnit:mm
CABSOLUTE MAXIMUM RATINGS ICCharacterist |
 WEJ |
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