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2SA1024 Datasheet PDF Search Results

No Part number Description ( Function ) Manufacturers PDF
1 2SA1024
PNP Silicon Epitaxial Planar Transistor

2SA1024 PNP Silicon Epitaxial Planar Transistor for high voltage applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 C) O Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC IE Ptot Tj Tstg Value 150 150 5 50 50 625 150 - 55 to + 150 Unit V V V mA mA mW O C C O Characteristics at Ta

ETC - 2SA1024 pdf datasheet
ETC
2SA1024 datasheet pdf

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It can be published by the manufacturer to help people choose products or to help use the products.


2SA10 Data sheets

No Description ( Function) Manufacturers PDF
2SA1015   Silicon NPN Epitaxial Type TRANSISTOR

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
2SA1013   Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Power Switching Applications 2SA1013 Unit: mm • High voltage: VCEO = −160 V • Large continuous collector current capability • Recommended for vertical d

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
2SA1024   PNP Silicon Epitaxial Planar Transistor

2SA1024 PNP Silicon Epitaxial Planar Transistor for high voltage applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Colle

ETC
ETC
datasheet pdf
2SA1020   TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications • • • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
2SA1038S   High-voltage Amplifier Transistor (−120V/ −50mA)

2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (−120V, −50mA) 2SA1579 / 2SA1514K / 2SA1038S zFeatures 1) High breakdown voltage. (BVCEO = −120V) 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S. zExternal dimensions (Unit : mm) 2SA1579 (1) 0.6

Rohm
Rohm
datasheet pdf
2SA1037   General Purpose Transistor

Transistors 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS General Purpose Transistor (−50V, −0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS !Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. !Externa

Rohm
Rohm
datasheet pdf


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