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Datasheet 2SA1020 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | 2SA1020 | TRANSISTOR (POWER AMPLIFIER APPLICATIONS) 2SA1020
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020
Power Amplifier Applications Power Switching Applications
• • • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SC2655 Unit: mm
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 Toshiba Semiconductor |
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| 8 | 2SA1020 | TO-92MOD Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-92MOD Plastic-Encapsulated Transistors
2SA1020
FEATURES Power dissipation PCM : 900 mW (Tamb=25℃)
TRANSISTOR (PNP)
TO-92MOD
1. EMITTER 2. COLLECTOR 3. BASE
Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -50 Operating and storage junction t |
 ETC |
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| 7 | 2SA1020 | PNP EPITAXIAL SILICON TRANSISTOR UTC 2SA1020
PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC 2SA1020 is designed for power amplifier and power switching applications.
1
FEATURES
*Low collector saturation voltage: VCE(sat)=-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.) *Co |
 Unisonic Technologies |
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| 6 | 2SA1020 | One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE
2SA1020
Preferred Device
One Watt High Current PNP Transistor
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25 |
 ON Semiconductor |
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